inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD634 description high dc current gain : h fe = 2000(min.) @i c = 3.0a low saturation voltage : v ce(sat) = 1.5v(max.)@ i c = 3.0a complement to type 2sb674 applications high power switching applications. hammer drive, pulse motor drive applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i b b base current-continuous 0.2 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD634 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 80 v v ce( sat )-1 collector-emitter saturation voltage i c = 3a; i b = 6ma b 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 7a; i b = 14ma b 2.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 6ma b 2.5 v i cbo collector cutoff current v cb = 80v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma h fe-1 dc current gain i c = 3a ; v ce = 3v 2000 15000 h fe-2 dc current gain i c = 7a ; v ce = 3v 1000 switching times t on turn-on time 0.8 s t stg storage time 3.0 s t f fall time i b1 = -i b2 = 6ma; r l = 15 ; v cc = 45v; p w = 20 s, duty cycle 1% 2.5 s isc website www.iscsemi.cn 2
|
